Metalorganic Vapor Phase Epitaxy of ZnSe Using Tertiarybutylselenol as Selenium Source Precursor
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概要
- 論文の詳細を見る
Metalorganic vapor phase epitaxy of ZnSe on a GaAs substrate was carried out using a novel organic selenium source, tertiarybutylselenol (t-BuSeH), for the first time. A constant and high growth rate was attainable in the growth temperature range of 280-500℃ using t-BuSeH. The low-temperature reaction between diethylzinc and t-BuSeH was virtually eliminated, therefore growth uniformity and reproducibility were satisfactory. The grown ZnSe layers were evaluated to be of high quality by photoluminescence and X-ray diffraction measurement.
- 社団法人応用物理学会の論文
- 1993-03-15
著者
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Sakai Kazuo
Kdd Research And Development Laboratories
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NISHIMURA Kohsuke
KDD R & D Laboratories
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NAGAO Yasuyuki
KDD R & D Laboratories
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Nagao Y
Kdd R & D Laboratories
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Nishimura Kohsuke
Kdd R&d Laboratories
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Sakai Kazuo
Kdd R&d Laboratories
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SAKAI Kazuo
KDD R & D Laboratories Inc.
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