Sakai Kazuo | Kdd R&d Laboratories

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著作論文

10000-Hour Continous CW Operation of InGaAsP/InP Heterostructure Lasers with a Buffer Layer at Room Temperature
Metalorganic Vapor Phase Epitaxy of ZnSe Using Tertiarybutylselenol as Selenium Source Precursor
Planar In_Ga_As Avalanche Photodiodes with Guard-Ring Structure
Effects of Double-Cladding Structure on LPE-Grown InGaAsP/InP Lasers in the 1.5 μm Range
Growth of In_Ga_As on (100)-oriented InP from Supercooled Solution
In_Ga_As/In_Ga_xAs_yP_ Double Heterostructure Lasers with Emission Wavelength of 1.67 μm at Room Temperature
Growth of Lattice-Matched InGaAsP/InP Double-Heterostructures by the Two-Phase Supercooled Solution Technique
500-hour CW Operation of InGaAsP/InP Double Heterostructure Lasers Fabricated on (100)-InP Substrates
Asymmetry in Output Power of InGaAsP/InP DFB Lasers
Temperature Dependence of Lasing Characteristics of InGaAsP/InP Distributed Feedback Lasers in 1.5 μm Range
Recent Progress of Wavelength Division Multiplexing Technology In Tera-bit/s Transoceanic Undersea Cable Systems
Dark-Current of In_Ga_As/InP Mesa-Type Avalanche Photodetector

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