Sakai Kazuo | Institute Of Industrial Science University Of Tokyo:(present Address) Kdd Research And Development L
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概要
- 同名の論文著者
- Institute Of Industrial Science University Of Tokyo:(present Address) Kdd Research And Development Lの論文著者
関連著者
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Sakai Kazuo
Institute Of Industrial Science University Of Tokyo:(present Address) Kdd Research And Development L
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Sakai Kazuo
Kdd Research And Development Laboratories
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Akiba Shigeyuki
Kdd Research And Development Laboratories
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Sakai Kazuo
Kdd R&d Laboratories
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SAKAI Kazuo
KDD R & D Laboratories Inc.
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Yamamoto Takaya
Kdd Research And Development Laboratories
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MATSUSHIMA Yuichi
KDD Research and Development Laboratories
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Matsushima Y
Kddi R&d Laboratories Inc.
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Matsushima Yuichi
Kdd R&d Laboratories
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Matsushima Yuichi
KDDI R&D Laboratories Inc.
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IKOMA Toshiaki
Institute of Industrial Science, University of Tokyo
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Utaka Katsuyuki
Kdd Research And Development Laboratories
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Ikoma T
Univ. Tokyo Tokyo Jpn
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ADACHI Yoshio
Institute of Industrial Science, University of Tokyo
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SAKAI Kazuo
Institute of Industrial Science, University of Tokyo
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Ikoma Toshiaki
Institute Of Industrial Science The University Of Tokyo
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Adachi Yoshio
Institute Of Industrial Science University Of Tokyo
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Sakai Kazuo
Institute Of Industrial Science University Of Tokyo
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Adachi Yoshio
Institute for Protein Research, Osaka University
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Noda Yukio
Kdd Research And Development Laboratories
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Sakai K
Department Of Computer Science And Media Engineering Faculty Of Engineering Yamanashi University
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YANAI Hisayoshi
Faculty of Engineering, University of Tokyo
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Yanai Hisayoshi
Faculty Of Engineering University Of Tokyo
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Sakai Kazuo
Department Of Physics Faculty Of Science Science University Of Tokyo
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Nakamura Yoshihiro
Department Of Computer Science And Media Engineering Faculty Of Engineering Yamanashi University
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Sakai Kazuo
Department of Computer Science and Media Engineering, Faculty of Engineering, Yamanashi University
著作論文
- Electron Transport Properties of Ga_xIn_Sb Calculated by the Monte Carlo Method
- Thermally Stimulated Capacitance and Thermally Stimulated Current in a p-n Junction with Generation-Recombination Centers
- 10000-Hour Continous CW Operation of InGaAsP/InP Heterostructure Lasers with a Buffer Layer at Room Temperature
- Planar In_Ga_As Avalanche Photodiodes with Guard-Ring Structure
- Effects of Double-Cladding Structure on LPE-Grown InGaAsP/InP Lasers in the 1.5 μm Range
- Growth of In_Ga_As on (100)-oriented InP from Supercooled Solution
- In_Ga_As/In_Ga_xAs_yP_ Double Heterostructure Lasers with Emission Wavelength of 1.67 μm at Room Temperature
- Growth of Lattice-Matched InGaAsP/InP Double-Heterostructures by the Two-Phase Supercooled Solution Technique
- 500-hour CW Operation of InGaAsP/InP Double Heterostructure Lasers Fabricated on (100)-InP Substrates
- Asymmetry in Output Power of InGaAsP/InP DFB Lasers
- Temperature Dependence of Lasing Characteristics of InGaAsP/InP Distributed Feedback Lasers in 1.5 μm Range
- Diamagnetic Force Acting on Electron Beams in Superconducting Tubes