SAKAI Kazuo | KDD R & D Laboratories Inc.
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概要
関連著者
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Sakai Kazuo
Kdd Research And Development Laboratories
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Sakai Kazuo
Kdd R&d Laboratories
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SAKAI Kazuo
KDD R & D Laboratories Inc.
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Akiba Shigeyuki
Kdd Research And Development Laboratories
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Sakai Kazuo
Institute Of Industrial Science University Of Tokyo:(present Address) Kdd Research And Development L
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Yamamoto Takaya
Kdd Research And Development Laboratories
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MATSUSHIMA Yuichi
KDD Research and Development Laboratories
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Matsushima Yuichi
Kdd R&d Laboratories
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Matsushima Y
Kddi R&d Laboratories Inc.
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Matsushima Yuichi
KDDI R&D Laboratories Inc.
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Utaka Katsuyuki
Kdd Research And Development Laboratories
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NISHIMURA Kohsuke
KDD R & D Laboratories
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NAGAO Yasuyuki
KDD R & D Laboratories
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Nagao Y
Kdd R & D Laboratories
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Noda Yukio
Kdd Research And Development Laboratories
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Nishimura Kohsuke
Kdd R&d Laboratories
著作論文
- 10000-Hour Continous CW Operation of InGaAsP/InP Heterostructure Lasers with a Buffer Layer at Room Temperature
- Metalorganic Vapor Phase Epitaxy of ZnSe Using Tertiarybutylselenol as Selenium Source Precursor
- Planar In_Ga_As Avalanche Photodiodes with Guard-Ring Structure
- Effects of Double-Cladding Structure on LPE-Grown InGaAsP/InP Lasers in the 1.5 μm Range
- Growth of In_Ga_As on (100)-oriented InP from Supercooled Solution
- In_Ga_As/In_Ga_xAs_yP_ Double Heterostructure Lasers with Emission Wavelength of 1.67 μm at Room Temperature
- Growth of Lattice-Matched InGaAsP/InP Double-Heterostructures by the Two-Phase Supercooled Solution Technique
- 500-hour CW Operation of InGaAsP/InP Double Heterostructure Lasers Fabricated on (100)-InP Substrates
- Asymmetry in Output Power of InGaAsP/InP DFB Lasers
- Temperature Dependence of Lasing Characteristics of InGaAsP/InP Distributed Feedback Lasers in 1.5 μm Range
- Dark-Current of In_Ga_As/InP Mesa-Type Avalanche Photodetector