Effects of Double-Cladding Structure on LPE-Grown InGaAsP/InP Lasers in the 1.5 μm Range
スポンサーリンク
概要
- 論文の詳細を見る
The effects of a double-cladding structure, made on an active layer and consisting of a quaternary buffer layer and an InP layer, on LPE-grown InGaAsP/InP lasers in the 1.5 μm range are reported. A smoother hetero-interface, lower threshold current density and smaller threshold current temperature dependence were obtained in comparison with DH lasers having only a quaternary cladding layer. As for reliability, no undersirable effects due to the insertion of an additional buffer layer have been found.
- 社団法人応用物理学会の論文
- 1980-02-05
著者
-
Sakai Kazuo
Kdd Research And Development Laboratories
-
Yamamoto Takaya
Kdd Research And Development Laboratories
-
Akiba Shigeyuki
Kdd Research And Development Laboratories
-
MATSUSHIMA Yuichi
KDD Research and Development Laboratories
-
Matsushima Y
Kddi R&d Laboratories Inc.
-
Matsushima Yuichi
Kdd R&d Laboratories
-
Sakai Kazuo
Institute Of Industrial Science University Of Tokyo:(present Address) Kdd Research And Development L
-
Sakai Kazuo
Kdd R&d Laboratories
-
SAKAI Kazuo
KDD R & D Laboratories Inc.
-
Matsushima Yuichi
KDDI R&D Laboratories Inc.
関連論文
- Highly Reliable and High Power 980 nm Pump Laser Diode Module for Undersea Cable Systems (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Highly Reliable and High Power 980 nm Pump Laser Diode Module for Undersea Cable Systems (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Mapping of Human DNA-binding Nuclear Protein (NP220) to Chromosome Band 2p13.1-p13.2 and Its Relation to Matrin 3
- Zinc Finger-like Motif Conserved in a Family of RNA Binding Proteins
- Electron Transport Properties of Ga_xIn_Sb Calculated by the Monte Carlo Method
- Thermally Stimulated Capacitance and Thermally Stimulated Current in a p-n Junction with Generation-Recombination Centers
- 10000-Hour Continous CW Operation of InGaAsP/InP Heterostructure Lasers with a Buffer Layer at Room Temperature
- Optoelectronic Logic Operations by Triangular-Barrier Optoelectronic Switch
- Metalorganic Vapor Phase Epitaxy of ZnSe Using Tertiarybutylselenol as Selenium Source Precursor
- Planar In_Ga_As Avalanche Photodiodes with Guard-Ring Structure
- Effects of Double-Cladding Structure on LPE-Grown InGaAsP/InP Lasers in the 1.5 μm Range
- Growth of In_Ga_As on (100)-oriented InP from Supercooled Solution
- In_Ga_As/In_Ga_xAs_yP_ Double Heterostructure Lasers with Emission Wavelength of 1.67 μm at Room Temperature
- Growth of Lattice-Matched InGaAsP/InP Double-Heterostructures by the Two-Phase Supercooled Solution Technique
- 500-hour CW Operation of InGaAsP/InP Double Heterostructure Lasers Fabricated on (100)-InP Substrates
- Asymmetry in Output Power of InGaAsP/InP DFB Lasers
- Temperature Dependence of Lasing Characteristics of InGaAsP/InP Distributed Feedback Lasers in 1.5 μm Range
- New Method for Reduction of Carrier Lifetime in Semiconductor Optical Amplifier Using Assist Light
- Extension of Operational Range of Semiconductor Optical Add and Drop Multiplexer
- Sidemode Suppression of Optical Add-and-Drop Multiplexer Utilizing Vertically Coupled InGaAsP Waveguides
- Recent Progress of Wavelength Division Multiplexing Technology In Tera-bit/s Transoceanic Undersea Cable Systems
- Dark-Current of In_Ga_As/InP Mesa-Type Avalanche Photodetector
- Diamagnetic Force Acting on Electron Beams in Superconducting Tubes