Asymmetry in Output Power of InGaAsP/InP DFB Lasers
スポンサーリンク
概要
- 論文の詳細を見る
The output powers from the two ends of a DFB region were compared. The power ratios and the external differential quantum efficiencies of the lowest-threshold modes were calculated in detail for an asymmetric end structure, one end being a cleaved facet and the other end being non-reflective. Power ratios of 2-5, depending on the corrugation phase at the cleaved facet, were predicted for _kL=2-3. Such large ratios were actually estimated experimentally in InGaAsP/InP DFB lasers with a window region at one end. A larger output from a window region may be useful if the window region length is restricted, to about 10 μm or less in this case. The asymmetric output power in an FP-type DFB laser was also demonstrated.
- 社団法人応用物理学会の論文
- 1984-08-20
著者
-
Sakai Kazuo
Kdd Research And Development Laboratories
-
Utaka Katsuyuki
Kdd Research And Development Laboratories
-
Akiba Shigeyuki
Kdd Research And Development Laboratories
-
MATSUSHIMA Yuichi
KDD Research and Development Laboratories
-
Matsushima Y
Kddi R&d Laboratories Inc.
-
Matsushima Yuichi
Kdd R&d Laboratories
-
Sakai Kazuo
Institute Of Industrial Science University Of Tokyo:(present Address) Kdd Research And Development L
-
Sakai Kazuo
Kdd R&d Laboratories
-
SAKAI Kazuo
KDD R & D Laboratories Inc.
-
Matsushima Yuichi
KDDI R&D Laboratories Inc.
関連論文
- Highly Reliable and High Power 980 nm Pump Laser Diode Module for Undersea Cable Systems (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Highly Reliable and High Power 980 nm Pump Laser Diode Module for Undersea Cable Systems (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Mapping of Human DNA-binding Nuclear Protein (NP220) to Chromosome Band 2p13.1-p13.2 and Its Relation to Matrin 3
- Zinc Finger-like Motif Conserved in a Family of RNA Binding Proteins
- Electron Transport Properties of Ga_xIn_Sb Calculated by the Monte Carlo Method
- Thermally Stimulated Capacitance and Thermally Stimulated Current in a p-n Junction with Generation-Recombination Centers
- 10000-Hour Continous CW Operation of InGaAsP/InP Heterostructure Lasers with a Buffer Layer at Room Temperature
- Optoelectronic Logic Operations by Triangular-Barrier Optoelectronic Switch
- Metalorganic Vapor Phase Epitaxy of ZnSe Using Tertiarybutylselenol as Selenium Source Precursor
- Planar In_Ga_As Avalanche Photodiodes with Guard-Ring Structure
- Effects of Double-Cladding Structure on LPE-Grown InGaAsP/InP Lasers in the 1.5 μm Range
- Growth of In_Ga_As on (100)-oriented InP from Supercooled Solution
- In_Ga_As/In_Ga_xAs_yP_ Double Heterostructure Lasers with Emission Wavelength of 1.67 μm at Room Temperature
- Growth of Lattice-Matched InGaAsP/InP Double-Heterostructures by the Two-Phase Supercooled Solution Technique
- 500-hour CW Operation of InGaAsP/InP Double Heterostructure Lasers Fabricated on (100)-InP Substrates
- Asymmetry in Output Power of InGaAsP/InP DFB Lasers
- Temperature Dependence of Lasing Characteristics of InGaAsP/InP Distributed Feedback Lasers in 1.5 μm Range
- New Method for Reduction of Carrier Lifetime in Semiconductor Optical Amplifier Using Assist Light
- Extension of Operational Range of Semiconductor Optical Add and Drop Multiplexer
- Sidemode Suppression of Optical Add-and-Drop Multiplexer Utilizing Vertically Coupled InGaAsP Waveguides
- Recent Progress of Wavelength Division Multiplexing Technology In Tera-bit/s Transoceanic Undersea Cable Systems
- Dark-Current of In_Ga_As/InP Mesa-Type Avalanche Photodetector
- Diamagnetic Force Acting on Electron Beams in Superconducting Tubes