Transient Impulse Breakdowns of SF_6 Gas in Inhomogeneous Electric Fields

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-08-15

著者

• KAWAMURA Tatsuo

  Department of Electrical Engineering, Shibaura Institute of Technology

• Lee Bok-hee

  School Of Electrical And Computer Engineering Inha University

• Kawamura Tatsuo

  Department Of Electrical Engineering Shibaura Institute Of Technology

• Kawamura Tatsuo

  Department Of Electrical Systems For Urban Engineering Shibaura Institute Of Technology

関連論文

• X-Ray Standing Wave Analysis of GaAs/Si Interface
• X-Ray Standing Wave Analysis of Al/GaAs/Si(111)
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• Two-Dimensional In_Ga_As/GaAs Quantum Dot Superlattices Realized by Self-Organized Epitaxial Growth
• Magnetoluminescence Studies of Highly Packed InGaAs Self-organized Quantum Dots on GaAs(311)B
• The Procedure to Realize Two-Dimensional Quantum Dot Superlattices : From Incoherently Coupled to Coherently Coupled Quantum Dot Arrays
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• Hole Transport in Glow-Discharge Produced a-Si:H:F Film
• Deposition Mechanism of a-Si:H Film in Disilane-Hydrogen Plasma
• Preparation and Some Properties of Highly Resistive a-Si:H:F Film
• Transient Impulse Breakdowns of SF_6 Gas in Inhomogeneous Electric Fields
• Growth Mechanism of Surface Dots Self-Assembled on InP (311)B Substrate
• Photoemission and RHEED Studies of Bonding Properties at the CaF_2/GaAs(001) Interface
• Physical Properties of Radiation Fields Produced by Multiple In-cloud Lightning Discharges

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