Effects of Phosphorus Dopant on the Thermal Stability of Thin Pd_2Si and PtSi Silicide Films on (100) Si Substrates
スポンサーリンク
概要
- 論文の詳細を見る
The effects of phosphorus dopant on the thermal stability of thin Pd and Pt silicide films on (100) Si substrates have been studied. For the samples formed by implanting phosphorus dopant into thin Pd films followed by annealing, both the thermal stability and the silicide conductivity of thin Pd_2Si films are significantly enhanced relative to the control samples without dopant incorporation. Large improvements in the thermal stability and the silicide conductivity are dependent on the formation of a textured Pd_2Si structure. In addition, the Pt silicides formed by implanting phosphorus dopant into thin Pt films followed by annealing also show considerably improved thermal stability.
- 社団法人応用物理学会の論文
- 1999-07-15
著者
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Ou-yang Chang-i
Department Of Electrical Engineering National Taiwan University Of Science And Technology
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Lin Cheng-tung
Department Of Electrical Engineering National Taiwan University Of Science And Technology
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Lin Cheng-tung
Department Of Chemistry Washington University
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JUANG Miin-Horng
Department of Electronics Engineering, National Taiwan University of Science and Technology
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Juang Miin-horng
Department Of Electrical Engineering National Taiwan University Of Science And Technology
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- Effects of Phosphorus Dopant on the Thermal Stability of Thin Pd_2Si and PtSi Silicide Films on (100) Si Substrates
- Effects of Post-Oxygen Plasma Treatment on Pt/(Ba,Sr)TiO3/Pt Capacitors at Low Substrate Temperatures
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