Formation of Shallow p^+n Junctions Using Different Annealing Schemes with Low Thermal Budget
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-03-15
著者
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Harn Sui-chan
Department Of Electronics Engineering National Taiwan University Of Science & Technology
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JUANG Miin-Horng
Department of Electronics Engineering, National Taiwan University of Science and Technology
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Juang Miin-horng
Department Of Electronics Engineering National Taiwan University Of Science & Technology
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Juang Miin-horng
Department Of Electrical Engineering National Taiwan University Of Science And Technology
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- Effects of Post-Oxygen Plasma Treatment on Pt/(Ba,Sr)TiO_3/Pt Capacitors at Low Substrate Temperatures
- Effects of Rapid Thermal Annealing on Cobalt Silicided p^+ poly-Si Gates Fabricated by BF^+_2 Implantation into Bilayered CoSi/a-Si Films
- Effects of Ni Silicidation on the Shallow p^+n Junctions Formed by BF^+_2 Implantation into Thin Polycrystalline-Si Films on Si Substrates
- Formation of Shallow p^+n Junctions Using Different Annealing Schemes with Low Thermal Budget
- Effects of Phosphorus Dopant on the Thermal Stability of Thin Pd_2Si and PtSi Silicide Films on (100) Si Substrates
- Effects of Post-Oxygen Plasma Treatment on Pt/(Ba,Sr)TiO3/Pt Capacitors at Low Substrate Temperatures
- Formation of Shallow p+n Junctions Using Different Annealing Schemes with Low Thermal Budget