Numerical Analysis of the Electrical Characteristics of Gate Overlapped Lightly Doped Drain Polysilicon Thin Film Transistors

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概要

• 論文の詳細を見る
• 1999-06-15

著者

• Fortunato Guglielmo

  Istituto Di Elettronica Dello Stato Solido Cnr

• Fortunato G.

  Istituto Di Elettronica Dello Stato Solido Cnr

• Mariucci L

  Istituto Di Elettronica Dello Stato Solido Cnr

• MARIUCCI Luigi

  Istituto di Elettronica dello Stato Solido, CNR

• Pecora Alessandro

  Istituto Di Elettronica Dello Stato Solido Cnr

• Ayres J.

  Philips Research

• MASSUSSI Fabio

  Istituto di Elettronica dello Stato Solido, CNR

• BROTHERTON Stanley

  Philips Research Laboratories

• Massussi Fabio

  Istituto Di Elettronica Dello Stato Solido Cnr

• Mariucchi Luigi

  Istituto di Elettronica dello Stato Solido, CNR

関連論文

• Numerical Analysis of the Electrical Characteristics of Gate Overlapped Lightly Doped Drain Polysilicon Thin Film Transistors
• Analysis of Drain Field and Hot Carrier Stability of Poly-Si Thin Film Transistors
• A Two-Pass Excimer Laser Annealing Process to Control Amorphous Silicon Crystallization
• Pd-Gate a-Si:H Thin-Film Transistors as Hydrogen Sensors
• Differentiation of Effects due to Grain and Grain Boundary Traps in Laser Annealed Poly-Si Thin Film Transistors
• Source-Drain Metal Contact Effects in Short-Channel a-Si:H Thin-Film Transistors
• Integrated Ambient Light Sensor with an LTPS Noise-Robust Circuit and a-Si Photodiodes for AMLCDs
• Theoretical Analysis of a-Si:H Based Multilayer Structure Thin Film Transistors

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