Theoretical Analysis of a-Si:H Based Multilayer Structure Thin Film Transistors

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概要

• 論文の詳細を見る

• In this paper we show that the experimentally observed increase in the field-effect mobility in superlattice TFTs can be accounted for by a simple classical model based on Poisson's equation, including the presence of interface states at every interface. The field-effect mobility enhancement is a direct consequence of the different potential and electric field distibutions among the various layers, if compared with a single layer structure with the same total active layer thickness. The results of the calculations fit well experimental data already reported. Furthermore, the analysis of the single layer structure shows a similar field-effect mobility enhancement, suggesting the reduction of the active layer thickness as a key factor.

• 社団法人応用物理学会の論文
• 1990-09-20

著者

• Fortunato Guglielmo

  Istituto Di Elettronica Dello Stato Solido Cnr

• Fortunato G.

  Istituto Di Elettronica Dello Stato Solido

• Fortunato G.

  Istituto Di Elettronica Dello Stato Solido Cnr

• Mariucci L

  Istituto Di Elettronica Dello Stato Solido Cnr

• Reita C.

  Istituto Di Elettronica Dello Stato Solido Cnr

• MARIUCCI L.

  Istituto di Elettronica dello Stato Solido, CNR

関連論文

• Numerical Analysis of the Electrical Characteristics of Gate Overlapped Lightly Doped Drain Polysilicon Thin Film Transistors
• A Two-Pass Excimer Laser Annealing Process to Control Amorphous Silicon Crystallization
• Pd-Gate a-Si:H Thin-Film Transistors as Hydrogen Sensors
• The Sub-Threshold Characteristics of Polysilicon Thin-Film-Transistors : Semiconductors and Semiconductor Devices
• Source-Drain Metal Contact Effects in Short-Channel a-Si:H Thin-Film Transistors
• Theoretical Analysis of a-Si:H Based Multilayer Structure Thin Film Transistors

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