Differentiation of Effects due to Grain and Grain Boundary Traps in Laser Annealed Poly-Si Thin Film Transistors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-04-15
著者
-
Armstrong G.
Department Of Electrical And Electronic Engineering The Queen's University Of Belfast
-
UPPAL S.
Department of Electrical and Electronic Engineering The Queen's University of Belfast
-
BROTHERTON S.
Philips Research Laboratories
-
AYRES J.
Philips Research Laboratories
-
Uppal S.
Department Of Electrical And Electronic Engineering The Queen's University Of Belfast
-
Ayres J
Philips Res. Lab. Surrey Gbr
-
Ayres J.
Philips Research
-
Brotherton S
Philips Res. Lab. Surrey Gbr
-
Armstrong G.A.
Department of Electrical and Electronic Engineering The Queen's University of Belfast
-
Brotherton S.D.
Philips Research Laboratories
関連論文
- Numerical Analysis of the Electrical Characteristics of Gate Overlapped Lightly Doped Drain Polysilicon Thin Film Transistors
- Analysis of Drain Field and Hot Carrier Stability of Poly-Si Thin Film Transistors
- Differentiation of Effects due to Grain and Grain Boundary Traps in Laser Annealed Poly-Si Thin Film Transistors
- Differentiation of Effects Due to Grain and Grain Boundary Traps in Laser Annealed Poly-Si Thin Film Transistors
- Integrated Ambient Light Sensor with an LTPS Noise-Robust Circuit and a-Si Photodiodes for AMLCDs
- 5.3 : Issues in Excimer Laser Crystallization of Poly-Si(Report on IDMC2000)
- Influence of Excimer Laser Beam Shape on Poly-Si Crystallisation