Influence of Excimer Laser Beam Shape on Poly-Si Crystallisation

概要

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Excimer laser crystallization is the currently preferred technique for the fabrication of high performance poly-Si thin film transistors for use in active matrix displays with integrated drive circuits. One of the issues with this process is the trade-off between increased throughput, by reducing the number of laser shots per unit area, and the range of laser energies over which this can be reliably implemented. The fundamental aspects of the crystallization process are analysed, and it is demonstrated that the size of the laser process window has a complex dependence on beam shape and shot number. Experimental results are presented, which show good consistency with a simple analytical model, and the optimum beam shape, and the limits to its application, are discussed.
2004-08-15