Source-Drain Metal Contact Effects in Short-Channel a-Si:H Thin-Film Transistors

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概要

• 論文の詳細を見る

• Short-channel hydrogenated amorphous silicon thin-film transistors have been fabricated by using electron-beam lithography with the shortest channel length of L=0.2 μm. As source-drain contacts, Cr or Al have been used. In the case of Cr-contact field-effect mobility, μ_<FE> degradation for decreasing L has been observed, while the devices with Al-contacts show μ_<FE> around 0.7cm^2/V・s independently of the channel length. This result is related to low parasitic resistance shown by our devices and attributed to the Al-diffusion in the source-drain contact regions. The calculated maximum operating frequency for the shortest channel devices is about 250 MHz.

• 社団法人応用物理学会の論文
• 1990-12-20

著者

• Fortunato Guglielmo

  Istituto Di Elettronica Dello Stato Solido Cnr

• Fortunato G.

  Istituto Di Elettronica Dello Stato Solido Cnr

• Mariucci L

  Istituto Di Elettronica Dello Stato Solido Cnr

• Gentile Massimo

  Istituto Di Elettronica Dello Stato Solido Cnr

• MARIUCCI Luigi

  Istituto di Elettronica dello Stato Solido, CNR

• PECORA Alessandro

  Istituto di Elettronica dello Stato Solido, CNR

• PETROCCO Giovanni

  Istituto di Elettronica dello Stato Solido, CNR

• LUCIANI Laura

  Istituto di Elettronica dello Stato Solido, CNR

• Luciani Laura

  Istituto Di Elettronica Dello Stato Solido Cnr

• Pecora Alessandro

  Istituto Di Elettronica Dello Stato Solido Cnr

• Petrocco Giovanni

  Istituto Di Elettronica Dello Stato Solido Cnr

関連論文

• Numerical Analysis of the Electrical Characteristics of Gate Overlapped Lightly Doped Drain Polysilicon Thin Film Transistors
• A Two-Pass Excimer Laser Annealing Process to Control Amorphous Silicon Crystallization
• Pd-Gate a-Si:H Thin-Film Transistors as Hydrogen Sensors
• Source-Drain Metal Contact Effects in Short-Channel a-Si:H Thin-Film Transistors
• Theoretical Analysis of a-Si:H Based Multilayer Structure Thin Film Transistors

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