Fabrication of 0.2 μm Hole Patterns in KrF Excimer Laser Lithography
スポンサーリンク
概要
- 論文の詳細を見る
This paper describes the fabrication of 0.2 μm hole resist patterns in KrF excimer laser lithography. By using a SiN_x single-layer halftone phase-shifting mask (PSM) and art in-house chemically amplified positive resist, 0.2 μm hole resist patterns can be obtained with sufficient depth of focus (DOF). Furthermore, a 0.15 μm hole resist pattern can also be fabricated by using the PSM.
- 社団法人応用物理学会の論文
- 1997-05-15
著者
-
ONISHI Yasunobu
Process and Manufacturing Engineering Center, Toshiba Corporation
-
Tanaka Satoshi
Microelectronics Engineering Laboratory, Toshiba Corporations Semiconductor Company
-
Onishi Yasunobu
Process & Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
-
Onishi Yasunobu
Microelectronics Engineering Laboratory Toshiba Corporation
-
Onishi Yasunobu
Microelectronics Engineering Laboratories Toshiba Corporation
-
Asano Masafumi
Microelectronics Engineering Laboratory Toshiba Corp.
-
Asano Masafumi
Microelectronics Engineering Laboratories Toshiba Corporation
-
KAWANO Kenji
Microelectronics Engineering Laboratories, Toshiba Corporation
-
Kawano Kenji
Microelectronics Engineering Laboratories Toshiba Corporation
-
Tanaka Satoshi
Microelectronics Engineering Laboratories Toshiba Corporation
関連論文
- Optimization of Polysilane Structure as Fast-Etching Bottom Antireflective Coating for Deep Ultraviolet Lithography
- Development of An Accurate Optical Proximity Correction System for 1 Gbit Dynamic Random Access Memory Fabrication
- A New Stacked-Mask Process Utilizing Spun-on Carbon Film for Sub-130-nm Etching
- Application of Organic Silicon Clusters to Pattern Transfer Process for Deep UV Lithography
- Lithography Simulator for Electon Beam/Deep UV Intra-Level Mix & Match
- Fabrication of 0.2 μm Hole Patterns in KrF Excimer Laser Lithography
- Development Process for Chemically Amplified Resist by KrF Imaging
- Sub-100 nm Lithography with KrF Exposure Using Multiple Development Method