Development Process for Chemically Amplified Resist by KrF Imaging

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概要

• 論文の詳細を見る

• The development process for chemically amplified resist by KrF imaging was investigated. The effects of developer concentration, development time and surfactant on process latitude were examined. In order to extend the process latitude, the development condition with faster dissolution rate at the center of the exposed area and slower dissolution rate at the edge of the exposed area was found to be promising. It was also found that the addition of a surfactant to the developer extended the process latitude. The developer with the surfactant tends to suppress the slimmed resist linewidth in the overexposed area and to enhance resist dissolution in the underexposed area.

• 社団法人応用物理学会の論文
• 1998-12-30

著者

• Mimotogi S

  Toshiba Corp. Yokohama Jpn

• Mimotogi Shoji

  Microelectronics Engineering Laboratory Toshiba Corporation

• Onishi Yasunobu

  Microelectronics Engineering Laboratory Toshiba Corporation

• Onishi Yasunobu

  Microelectronics Engineering Laboratories Toshiba Corporation

• Azuma Tsukasa

  Microelectronics Engineering Laboratory Toshiba Corporation

• MATSUNAGA Kentaro

  Microelectronics Engineering Laboratory, Toshiba Corporation

• KAWAMURA Daisuke

  Microelectronics Engineering Laboratory, Toshiba Corporation

• Matsunaga Kentaro

  Microelectronics Engineering Laboratory Toshiba Corporation

• Kawamura D

  Toshiba Corp. Yokohama Jpn

関連論文

• Optimization of Polysilane Structure as Fast-Etching Bottom Antireflective Coating for Deep Ultraviolet Lithography
• Application of Organic Silicon Clusters to Pattern Transfer Process for Deep UV Lithography
• Lithography Simulator for Electon Beam/Deep UV Intra-Level Mix & Match
• Fabrication of 0.2 μm Hole Patterns in KrF Excimer Laser Lithography
• Development Process for Chemically Amplified Resist by KrF Imaging

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