Sub-100 nm Lithography with KrF Exposure Using Multiple Development Method

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概要

• 論文の詳細を見る

• In this paper, a novel resist process technique using a chemically amplified resist with a multiple development method for improving photolithography resolution is described. By means of this technique, resist lines are formed at the edge position between the bright and dark fields of a photomask, and the repeating frequency that is more than the cutoff frequency of optics (ν_c=1/P_c=2NA/λ) can be delineated using a conventional exposure system. In the experiment, a grating resist pattern with a pitch of 200 nm was obtained using a conventional 0.6NA KrF exposure system and a 400 nm pitch photomask pattern. The pitch was less than the diffraction limit of 207 nm (=0.5λ/NA) in the optical system used, which cannot be realized by a conventional resist process even with resolution enhancement techniques such as off-axis illumination and phase-shifting mask.

• 社団法人応用物理学会の論文
• 1999-12-30

著者

• Asano Masafumi

  Microelectronics Engineering Laboratory Toshiba Corp.

• Asano Masafumi

  Microelectronics Engineering Laboratories Toshiba Corporation

関連論文

• Fabrication of 0.2 μm Hole Patterns in KrF Excimer Laser Lithography
• Sub-100 nm Lithography with KrF Exposure Using Multiple Development Method

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