Distribution of Cathodoluminescence in Triple Quantum Well of ZnCdSe/ZnSe
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概要
- 論文の詳細を見る
The spatial distributions of cathodoluminescence (CL) in a triple quantum well (TQW) of ZnCdSe/ZnSe grown by metalorganic vapor phase epitaxy (MOVPE) method on GaAs(001) have been examined using a low-temperature CL measurement system combined with a transmission electron microscope (TEM). The CL intensity distribution appearing in the CL images of cross-sectional samples of the TQW can be attributed to the well thickness fluctuation in each QW layer and to competition among channels of recombination such as radiative recombination due to impurities and non-radiative recombination at defects. Moreover, plan-view CL images of the TQW samples show the distribution of the misfit dislocations at the interfaces of each QW layer individually, and reveal the thickness fluctuation in the individual QW layers.
- 社団法人応用物理学会の論文
- 1997-04-15
著者
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Yamamoto Naoki
Department Of Bioregulation Research Nagoya City University Medical School
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Yamamoto Naoki
Department Of Physics Tokyo Institute Of Technology
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Mitsui Tadashi
Department Of Physics Tokyo Institute Of Technology
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Yamamoto Naoki
Department Of Bioinformatics Faculty Of Engineering Soka University
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