High-sensitivity Defect Evaluation by a New Preferential Etching Technique for Highly As-doped Si Crystals

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High-sensitivity Defect Evaluation by a New Preferential Etching Technique for Highly As-doped Si Crystals
短波長励起室温フォトルミネッセンス法及び表面電荷分析法によるシリコンエピタキシャル層ライフタイム品質の評価〔英文〕

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