短波長励起室温フォトルミネッセンス法及び表面電荷分析法によるシリコンエピタキシャル層ライフタイム品質の評価〔英文〕
スポンサーリンク
概要
- 論文の詳細を見る
- 1995-06-05
著者
-
KITAGAWARA Yutaka
SEH Isobe R & D Center, Shin-Etsu Handotai Co., Ltd.
-
TAKENAKA Takao
SEH Isobe R & D Center, Shin-Etsu Handotai Co., Ltd.
-
Kitagawara Yutaka
Seh Isobe R&d Center Shin-etsu Handotai Co. Ltd.
-
Takenaka Takao
Seh Isobe R&d Center Shin-etsu Handotai Co. Ltd.
-
HAYAMIZU Yoshinori
SEH Isobe R&D Center, Shin-Etsu Handotai Co., Ltd.
-
HOSHI Ryoji
SEH Isobe R&D Center, Shin-Etsu Handotai Co., Ltd.
-
Hoshi Ryoji
Seh Isobe R&d Center Shin-etsu Handotai Co. Ltd.
-
Hayamizu Yoshinori
Seh Isobe R&d Center Shin-etsu Handotai Co. Ltd.
-
速水 善範
SEH Isobe R&D Center, Shin-Etsu Handotai Co., Ltd.
-
KITAGAWARA Yutaka
SEH Isobe R&D Center, Shin-Etsu Handotai Co., Ltd.
関連論文
- Study of Applicability of AC Photovoltaic Method and Photoconductive Decay Method Using Microwaves as Noncontact Methods for Bulk Lifetime Measurement
- Medium Field Breakdown Origin on Metal Oxide Semiconductor Capacitor Containing Grown-in Czochralski Silicon Crystal Defects
- Medium Field Breakdown Following Local Tunneling Current on MOS Capacitor Containing Grown-in CZ Crystal Defects
- High-sensitivity Defect Evaluation by a New Preferential Etching Technique for Highly As-doped Si Crystals
- 短波長励起室温フォトルミネッセンス法及び表面電荷分析法によるシリコンエピタキシャル層ライフタイム品質の評価〔英文〕