Synthesis of Diamond Using Low Pressure Plasma Jet (<Special Issue> Plasma Processing)
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概要
- 論文の詳細を見る
With the use of the forced constricted type plasma jet, the synthesis of diamond is attemped under low pressure, in order to realize large area deposition at a high rate. The effect of the ambient gas pressure on the deposition rate and deposition area of the film is studied. It is clarified that the deposition area is extended markedly with decreasing gas pressure. Furthermore, diamond films are successfully synthesized without the large decrease of the deposition rate, even at 5 Torr.
- 社団法人応用物理学会の論文
- 1994-07-30
著者
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Fukumasa Osamu
Department Of Electrical And Electronic Engineering Faculty Of Engineering
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Sakiyama Satoshi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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AOKI Keiichirou
Department of Electrical and Electronic Engineering, Faculty of Engineering, Yamaguchi University
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Aoki Keiichirou
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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