Low-Temperature Epitaxial Growth of Si/Si_<1-x>Ge_x/Si Heterostructure by Chemical Vapor Deposition

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概要

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• By ultraclean low-pressure chemical vapor deposition (CVD) using SiH_4 and GeH_4 gases, low-temperature epitaxial growth of Si/Si_<1-x>Ge_x/Si heterostructures at high Ge fractions on Si(100) is achieved. The deposition rate and Ge fraction are controlled by the SiH_4 and GeH_4 partial pressures and the deposition temperature. Atomically flat surfaces and interfaces for the heterostructures containing Si_<0.8>Ge_<0.2>, Si_<0.5>Ge_<0.5> and Si_<0.3>Ge_<0.7> layers are obtained by deposition at 550, 500 and 450℃, respectively. Cross-sectional transmission electron microscope (TEM) images and Raman spectra show that these samples have excellent epitaxial qualities. It is also found that the Si_<0.5>G_<0.5>-channel metal-oxide-semiconductor field-effect transistor (MOSFET) has the highest peak field-effect mobility. Moreover, the atomic-layer growth of Si and Ge is achieved by the separation of surface adsorption and reaction of reactant gases. The adsorption processes of SiH_4 and GeH_4 are found to be described by the Langmuir adsorption-type equation.

• 社団法人応用物理学会の論文
• 1994-04-30

著者

• Ono Shoichi

  Laboratory For Microelectronics Research Institute Of Electrical Communication Tohoku University

• Murota Junichi

  Laboratory For Microelectronics Research Institute Of Electrical Communication Tohoku University

• Murota Junichi

  Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku

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