Low-Frequency Noise in GaAs
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概要
- 論文の詳細を見る
Low-frequency noise measurements were carried out on GaAs devices in the frequency and temperature ranges from 10 Hz to 100 kHz, and from 77 K to 300 K, respectively. The noise spectra are considered to be superpositions of generation-recombination noise components caused by traps. The activation energies of these traps are determined from the temperature dependence of the noise.
- 社団法人応用物理学会の論文
- 1990-07-20
著者
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Mizunami Toru
Department Of Electronics Faculty Of Engineering Kyushu Institute Of Technology
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Mizunami Toru
Department Of Electrical Engineering Faculty Of Engineering Kyushu Institute Of Technology
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Yang Shiyuan
Department Of Electronics Faculty Of Engineering Kyushu Institute Of Technology
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Yang Shiyuan
Department Of Automation Tsinghua University
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Takagi Keiji
Department of Chemical Science and Engineering, Faculty of Engineering, Kobe University
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Takagi Keiji
Department Of Electronics Faculty Of Engineering Kyushu Institute Of Technology
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