Low-Frequency Fluctuation of the Transport Factor in Junction Transistors
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概要
- 論文の詳細を見る
Noise analysis is carried out in a junction transistor. It is shown that the transport factor of the transistor fluctuates in proportion to the 3/2 power of the current at low frequency. This is derived from the base width modulation caused by mobility fluctuation in the collector space-charge region.
- 社団法人応用物理学会の論文
- 1993-09-15
著者
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Mizunami Toru
Department Of Electronics Faculty Of Engineering Kyushu Institute Of Technology
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Mizunami Toru
Department Of Electrical Engineering Faculty Of Engineering Kyushu Institute Of Technology
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Wada Masanori
Department Of Electronics Faculty Of Engineering Kyushu Institute Of Technology
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Yang Shiyuan
Department Of Electronics Faculty Of Engineering Kyushu Institute Of Technology
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Yang Shiyuan
Department Of Automation Tsinghua University
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Takagi Keiji
Department of Chemical Science and Engineering, Faculty of Engineering, Kobe University
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Takagi Keiji
Department Of Electronics Faculty Of Engineering Kyushu Institute Of Technology
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