Low-Frequency Noise in Semiconductor Optical Devices
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概要
- 論文の詳細を見る
Low-frequency noise measurements were carried out on semiconductor optical devices in the frequency and temperature ranges from 10 Hz to 100 kHz and from 77 K to 300 K, respectively. The samples are mainly photocouplers which include light emitting diodes (LED) and photodiodes (PD). The noise spectra of LED are considered to be superpositions of generation-recombination (g-r) noise components caused bv traps, and the activation energies of these traps are determined from the temperature dependence of noise. We also calculated the current dependence of noise and the correlation coefficients of noise between LED and PD, and discussed the mechanism and relation of these noises.
- 社団法人映像情報メディア学会の論文
- 1990-11-16
著者
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Araki Satoru
Department Of Electronics Faculty Of Engineering Kyushu Institute Of Technology
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Araki Satoru
Department Of Biology Faculty Of Science Kobe University
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Mizunami Toru
Department Of Electronics Faculty Of Engineering Kyushu Institute Of Technology
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Mizunami Toru
Department Of Electrical Engineering Faculty Of Engineering Kyushu Institute Of Technology
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Yang Shiyuan
Department Of Electronics Faculty Of Engineering Kyushu Institute Of Technology
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Yang Shiyuan
Department Of Automation Tsinghua University
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Takagi Keiji
Department of Chemical Science and Engineering, Faculty of Engineering, Kobe University
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Takagi Keiji
Department Of Electronics Faculty Of Engineering Kyushu Institute Of Technology
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