ArF-Exeimer-Laser Annealing of 3C-SiC Films
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概要
- 論文の詳細を見る
Boron-doped 3C-SiC films grown by thermal chemical vapor deposition (CVD) at 95O℃ using an infrared lamp were annealed using an ArF excimer laser (193 nm). The crystal quality was studied using reflection high-energy electron diffraction (RHEED), and the surface morphology was studied using a scanning electron microscope (SEM). It was demonstrated that both the crystal quality and the sturface morphology were improved after irradiation of three laser pulses with an energy density of 1.4-1.6J/cm^2 per pulse.
- 社団法人応用物理学会の論文
- 1998-01-15
著者
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Mizunami Toru
Department Of Electrical Engineering Faculty Of Engineering Kyushu Institute Of Technology
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Toyama Naotake
Department Of Electrical Engineering Faculty Of Engineering Kyushu Institute Of Technology
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