Behavior of Misfit Dislocations in GaAs Epilayers Grown on Si at Low Temperature by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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Asai K
Advanced Technology Research Laboratories Surnitomo Metal Industries Ltd.
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Asai Koyu
Advanced Technology Research Laboratories Sumitomo Metal Industries Ltd.
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Shiba Yasunari
Advanced Technology Research Laboratories, Surnitomo Metal Industries, Ltd.
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Katahama Hisashi
Advanced Technology Research Laboratories, Surnitomo Metal Industries, Ltd.
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Shiba Y
Advanced Technology Research Laboratories Surnitomo Metal Industries Ltd.
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Shiba Yasunari
Advanced Technology Research Laboratories Sumitomo Metal Industries Ltd.
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Katahama H
Advanced Technology Research Laboratories Sumitomo Metal Industries Limited
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Katahama Hisashi
Advanced Technology Research Laboratories, Sumitomo Metal Industries Limited
関連論文
- Threading Dislocation Reduction in GaAs on Si with a Single InGaAs Intermediate Layer
- Dynamical Formation Process of Pure Edge Misfit Dislocations at GaAs/Si Interfaces in Post-Annealing
- Behavior of Misfit Dislocations in GaAs Epilayers Grown on Si at Low Temperature by Molecular Beam Epitaxy
- Slip Length in Silicon Wafers Caused by Indentation during Heat Treatment
- Pinning Effect on Punched-Out Dislocations in Silicon Wafers Investigated Using Indentation Method
- Effect of Oxide Precipitate Size on Slip Generation in Large Diameter Epitaxial Wafers
- Effect of Oxide Precipitate Sizes on the Mechanical Strength of Czochralski Silicon Wafers
- Metal Organic Chemical Vapor Deposition Growth of GaAs on Si Using GaAs Buffer Layer Grown by an Alternate Gas Flow of Source Materials
- The Effects of AsH_3 Preflow Conditions at Low Temperature on the Morphology of GaAs Buffer Layers for GaAs/Si Grown by Metalorganic Chemical Vapor Deposition
- AsH_3 Pre-Exposure Conditions for GaAs Epitaxial Growth on Si by Melalorganic Chemical Vapor Deposition
- Effect of Oxide Precipitate Sizes on the Mechanical Strength of Czochralski Silicon Wafers