The Effects of AsH_3 Preflow Conditions at Low Temperature on the Morphology of GaAs Buffer Layers for GaAs/Si Grown by Metalorganic Chemical Vapor Deposition
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概要
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In the two-step growth of GaAs on Si, the effects of AsH_3 preflow conditions (preflow time and preflow rate) at a low temperature (450℃) on the morphology of GaAs buffer layers (GaAs islands) have been investigated with scanning electron microscopy. As the preflow time or preflow rate was increased, the islands were aligned parallel to the step edges of the misoriented Si surface, and Si surface coverage was increased. These results indicate that the sufficient AsH_3 preflow to the Si surface at low temperatures forms both multilayer steps on time Si surface for GaAs island nucleation and a stable GaAs/Si interface.
- 社団法人応用物理学会の論文
- 1991-11-15
著者
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Asai Koyu
Advanced Technology Research Laboratories Sumitomo Metal Industries Ltd.
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FUJITA Kazuhisa
Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.
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Shiba Yasunari
Advanced Technology Research Laboratories Sumitomo Metal Industries Ltd.
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Fujita Kazuhisa
Advanced Technology Research Laboratories Sumitomo Metal Industries Ltd.
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- Metal Organic Chemical Vapor Deposition Growth of GaAs on Si Using GaAs Buffer Layer Grown by an Alternate Gas Flow of Source Materials
- The Effects of AsH_3 Preflow Conditions at Low Temperature on the Morphology of GaAs Buffer Layers for GaAs/Si Grown by Metalorganic Chemical Vapor Deposition
- AsH_3 Pre-Exposure Conditions for GaAs Epitaxial Growth on Si by Melalorganic Chemical Vapor Deposition