AsH_3 Pre-Exposure Conditions for GaAs Epitaxial Growth on Si by Melalorganic Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
The effects of AsH_3 pre-exposure at high temperature on the crystalline quality of GaAs layer grown on Si have been studied using X-ray diffraction. The full width at half-maximum (FWHM) of the (400) reflection from the GaAs layer was affected by the pressure; at 100O℃, the sample with the AsH_3 pre-exposure at 76 Torr shows narrower FWHM than that with the pre-exposure at 760 Torr. Both samples are analyzed by SIMS. The concentration profile of As and Si around the interface in the sample with lower pressure is sharper than that in the sample with higher pressure.
- 社団法人応用物理学会の論文
- 1990-04-20
著者
-
Yamamoto Toshiro
Advanced Technology Research Laboratories Sumitomo Metal Industries Ltd.
-
Yamamoto Toshiro
Advanced Technology Laboratories Sumitomo Metal Industries Limited
-
FUJITA Kazuhisa
Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.
-
Shiba Yasunari
Advanced Technology Research Laboratories Sumitomo Metal Industries Ltd.
-
Fujita Kazuhisa
Advanced Technology Research Laboratories Sumitomo Metal Industries Ltd.
関連論文
- Threading Dislocation Reduction in GaAs on Si with a Single InGaAs Intermediate Layer
- Dynamical Formation Process of Pure Edge Misfit Dislocations at GaAs/Si Interfaces in Post-Annealing
- Behavior of Misfit Dislocations in GaAs Epilayers Grown on Si at Low Temperature by Molecular Beam Epitaxy
- Low-Temperature Metalorganic Chemical Vapor Deposition of GaAs on Si by Alternate Gas Flow of the Source Materials
- Generation of Oxidation-Induced Stacking Faults in Czochralski-Grown Silicon Crystals Exhibiting a Ring-like Distributed Stacking Fault Region
- Metal Organic Chemical Vapor Deposition Growth of GaAs on Si Using GaAs Buffer Layer Grown by an Alternate Gas Flow of Source Materials
- The Effects of AsH_3 Preflow Conditions at Low Temperature on the Morphology of GaAs Buffer Layers for GaAs/Si Grown by Metalorganic Chemical Vapor Deposition
- AsH_3 Pre-Exposure Conditions for GaAs Epitaxial Growth on Si by Melalorganic Chemical Vapor Deposition