Metal Organic Chemical Vapor Deposition Growth of GaAs on Si Using GaAs Buffer Layer Grown by an Alternate Gas Flow of Source Materials

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概要

• 論文の詳細を見る

• We tried the atomic layer epitaxy (ALE) growth of GaAs initial layer in a two-step growth of GaAs on Si by a conventional metal organic chemical vapor deposition (MOCVD) system. The etch pit density of GaAs overlayer became smaller than that without this approach. The cross sectional transmission electron microscope (TEM) of this sample indicated that the improvement of crystalline quality of GaAs overlayer was attributed to the smooth interface structure of GaAs/Si due to the layer by layer growth of the buffer layer.

• 社団法人応用物理学会の論文
• 1991-04-15

著者

• FUJITA Kazuhisa

  Advanced Technology Research Laboratories, Sumitomo Metal Industries, Ltd.

• Shiba Yasunari

  Advanced Technology Research Laboratories Sumitomo Metal Industries Ltd.

• Kanao Hiroto

  Advanced Technology Research Laboratories Sumitomo Metal Industries Ltd.

• Fujita Kazuhisa

  Advanced Technology Research Laboratories Sumitomo Metal Industries Ltd.

関連論文

• Threading Dislocation Reduction in GaAs on Si with a Single InGaAs Intermediate Layer
• Dynamical Formation Process of Pure Edge Misfit Dislocations at GaAs/Si Interfaces in Post-Annealing
• Behavior of Misfit Dislocations in GaAs Epilayers Grown on Si at Low Temperature by Molecular Beam Epitaxy
• Low-Temperature Metalorganic Chemical Vapor Deposition of GaAs on Si by Alternate Gas Flow of the Source Materials
• Metal Organic Chemical Vapor Deposition Growth of GaAs on Si Using GaAs Buffer Layer Grown by an Alternate Gas Flow of Source Materials
• The Effects of AsH_3 Preflow Conditions at Low Temperature on the Morphology of GaAs Buffer Layers for GaAs/Si Grown by Metalorganic Chemical Vapor Deposition
• AsH_3 Pre-Exposure Conditions for GaAs Epitaxial Growth on Si by Melalorganic Chemical Vapor Deposition

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