Negative Resistance in Compensated Silicon Diodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1969-06-05
著者
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Mizushima Yoshihiko
The Electrical Communication Laboratory Nippontelegraph And Telephone Public Corporation
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Ariyoshi Hisashi
The Electrical Communication Laboratory Nippontelegraph And Telephone Public Corporation
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Ariyoshi Hisashi
The Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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CHINO Ken-ichi
The Electrical Communication Laboratory, Nippontelegraph and Telephone Public Corporation
-
Mizushima Yoshihiko
The Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
-
Chino Ken-ichi
The Electrical Communication Laboratory Nippontelegraph And Telephone Public Corporation
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Chino Ken-ichi
The Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Properties of a New Avalanche Diode Oscillator Computed by a Large-Signal, Self-Consistent Simulation
- Large-Signal Analysis on Negative-Resistance Diode Due to Punch-Through-Injection and Transit-Time Effect
- Sustairting of the Low-Field Avalanche in the GaAs Thin-Film Switch
- Induced Stress-Sensitivity of Ion-Bombarded Silicon-Metal Contacts
- Negative Resistance in Compensated Silicon Diodes
- Stress Effect of Gold-Doped and Gamma-Irradiated Schottky-Barrier Diodes
- Effect of Surface Polishing on the Stress-Sensitivity of a Schottky-Barrier Diode
- Interface-wave Instability in a Parallel Arrangement of Two Semiconductor Sheets with Transverse Magnetic Field