Sustairting of the Low-Field Avalanche in the GaAs Thin-Film Switch
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概要
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High-speed switching phenomenon utilizing the dielectric breakdown in thin film of GaAs has been observed. The switch-on state is sustained at the field of 5×10^3 V/cm. It is proposed that the electron avalanche can be maintained in such a low field by considering the energy distribution of the current carriers. Once the dielectric break-down sets in, the electron concentration increases, and the distribution function changes to a displaced Maxwellian with a high-energy tail due to increased interelectronic scattering. This effect makes it possible to sustain the "low-field avalanche." The generation rate of the carriers is calculated for this distribution. The recombination rate is calculated for the direct interband radiative recombination. The calculated minimum sustaining field of the switch-on state is 3.2×10^3 V/cm. This field strength, as well as the current density, agrees approximately with the observed value.
- 社団法人応用物理学会の論文
- 1969-08-05
著者
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Mizushima Yoshihiko
The Electrical Communication Laboratory Nippontelegraph And Telephone Public Corporation
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Takagi Toru
The Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Mizushima Yoshihiko
The Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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