Stress Effect of Gold-Doped and Gamma-Irradiated Schottky-Barrier Diodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1969-04-05
著者
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OKAMOTO Hiroshi
The Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Mizushima Yoshihiko
The Electrical Communication Laboratory Nippontelegraph And Telephone Public Corporation
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Ariyoshi Hisashi
The Electrical Communication Laboratory Nippontelegraph And Telephone Public Corporation
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Ariyoshi Hisashi
The Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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CHINO Ken-ichi
The Electrical Communication Laboratory, Nippontelegraph and Telephone Public Corporation
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Mizushima Yoshihiko
The Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Chino Ken-ichi
The Electrical Communication Laboratory Nippontelegraph And Telephone Public Corporation
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Chino Ken-ichi
The Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Okamoto Hiroshi
The Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corp.
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- Induced Stress-Sensitivity of Ion-Bombarded Silicon-Metal Contacts
- Negative Resistance in Compensated Silicon Diodes
- Stress Effect of Gold-Doped and Gamma-Irradiated Schottky-Barrier Diodes
- Effect of Surface Polishing on the Stress-Sensitivity of a Schottky-Barrier Diode
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