Effect of Field Distribution of Silicon p-n-n^+ Avalanche Diodes on Efficiency
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1970-02-05
著者
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Okuto Yuji
Central Research Laboratories Nippon Electric Co. Ltd.
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Kondo Motoki
Central Research Laboratories Nippon Electric Co. Ltd.
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Matsumura Masakiyo
Central Research Laboratories Nippon Electric Co. Ltd.
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Matsumura Masakiyo
Central Research Laboratories Nippon Electric Co. Lid.
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NAGASHIMA Isao
Central Research Laboratories Nippon Electric Co., Ltd.
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Nagashima Isao
Central Research Laboratories Nippon Electric Co. Ltd.
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MATSUMURA Masakiyo
Central Research Laboratories Nippon Electric Co., Ltd.
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- The Temperature Coefficient of the Breakdown Voltage of Si Abrupt Punched-Through Type Diodes
- Computer Aided Si-MOSFET Process Designing : A-1: ADVANCED LITHOGRAPHY AND PROCESS
- Current Dependence of Frequency in Si IMPATT Diodes
- Effect of Field Distribution of Silicon p-n-n^+ Avalanche Diodes on Efficiency
- Transient Behavior of Conduction Current from Small Signal to Large Signal in Read Diodes
- Junction Temperatures under Breakdown Condition
- A New Operating Method for PLZT Display Devices
- Computer Simulation of Silicon Read and p-n-n^+ IMPATT Diodes under Large Signal Conditions
- Low Frequency Oscillation Induced by Anormalous Avalanche Negative Resistance in p-i-n Diodes
- Instability in the Avalanche Region of Si p-i-n Diodes