The Temperature Coefficient of the Breakdown Voltage of Si Abrupt Punched-Through Type Diodes

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概要

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• Experimental results on the temperature coefficient β of the breakdown voltage of punched-through type Si p^+-n-n^<++> diodes are described. The increment of the breakdown voltage ΔV is proportional to both the increment of the junction temperature ΔT and the width of the punched-through space chargeregion W_n・β (≡ΔV/[ΔT・V_B]) can be expressed by β=(2CW_0)/(E_<max>(2W_0-W_n)), where C=constant, E_<max>=the maximum electric field at the junction and W_0=the width of the punched-through space charge region calculated from the impurity concentration of n-layer. Values of β agree with those obtained by the simple theoretical relation of the ionization coefficient α.

• 社団法人応用物理学会の論文
• 1971-01-05

著者

• Okuto Yuji

  Central Research Laboratories Nippon Electric Co. Ltd.

• Okuto Yuji

  Central Research Laboratories Nippon Electric Company Ltd.

関連論文

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