Junction Temperatures under Breakdown Condition

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概要

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• A method of determining the junction temperature under breakdown condition is described. The junction temperature T_1 is calculated from the applied voltage and the current in the following equation: V_1=V_<BO>・{1+β(T_1-T_0)}+I_1・_<ρsc0>・γ(T_1-T_0)} where V_1 and I_1 are the applied voltage and current, V_<β0> and _<ρsc0> are the breakdown voltage and the space charge resistance at the ambient temperature T_0, and β and γ are the temperature coefficients of V_β and _<ρsc> respectively. Based on this method, the burn-out temperatures of mesa-type Si p^+-n junction diodes are found to be between 200〜300℃. The cause of burn-out at such a low temperature is also discussed.

• 社団法人応用物理学会の論文
• 1969-07-05

著者

• Okuto Yuji

  Central Research Laboratories Nippon Electric Co. Ltd.

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• Junction Temperatures under Breakdown Condition
• Low Frequency Oscillation Induced by Anormalous Avalanche Negative Resistance in p-i-n Diodes
• Instability in the Avalanche Region of Si p-i-n Diodes

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