Instability in the Avalanche Region of Si p-i-n Diodes

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1968-05-05

著者

• Okuto Yuji

  Central Research Laboratories Nippon Electric Co. Ltd.

• Kondo Motoki

  Central Research Laboratories Nippon Electric Co. Ltd.

• NAGASHIMA Isao

  Central Research Laboratories Nippon Electric Co., Ltd.

• Nagashima Isao

  Central Research Laboratories Nippon Electric Co. Ltd.

• UCHISA Ichizo

  Central Research Laboratories Nippon Electric Co., Ltd.

関連論文

• Stress Effect on the Microwave Emission from Si Avalanche Diodes
• The Temperature Coefficient of the Breakdown Voltage of Si Abrupt Punched-Through Type Diodes
• Computer Aided Si-MOSFET Process Designing : A-1: ADVANCED LITHOGRAPHY AND PROCESS
• Current Dependence of Frequency in Si IMPATT Diodes
• Effect of Field Distribution of Silicon p-n-n^+ Avalanche Diodes on Efficiency
• Junction Temperatures under Breakdown Condition
• Low Frequency Oscillation Induced by Anormalous Avalanche Negative Resistance in p-i-n Diodes
• Instability in the Avalanche Region of Si p-i-n Diodes

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