Current Dependence of Frequency in Si IMPATT Diodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1968-04-05
著者
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Okuto Yuji
Central Research Laboratories Nippon Electric Co. Ltd.
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Uchida Ichizo
Central Research Laboratories Nippon Electric Co. Ltd.
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Kondo Motoki
Central Research Laboratories Nippon Electric Co. Ltd.
関連論文
- Stress Effect on the Microwave Emission from Si Avalanche Diodes
- Build-up Time of the First and the Second Current Saturation in a CdS Single Crystal
- Two Kinds of Current Saturation on Non-Ohmic Behavior in CdS
- The Second Current Saturation of Non-Ohmic Behavior in CdS Single Crystals
- Two Steps Saturation of Pulsed Current in CdS Single Crystals
- The Temperature Coefficient of the Breakdown Voltage of Si Abrupt Punched-Through Type Diodes
- Computer Aided Si-MOSFET Process Designing : A-1: ADVANCED LITHOGRAPHY AND PROCESS
- Current Dependence of Frequency in Si IMPATT Diodes
- Effect of Field Distribution of Silicon p-n-n^+ Avalanche Diodes on Efficiency
- Junction Temperatures under Breakdown Condition
- Low Frequency Oscillation Induced by Anormalous Avalanche Negative Resistance in p-i-n Diodes
- Instability in the Avalanche Region of Si p-i-n Diodes