Computer Simulation of Silicon Read and p-n-n^+ IMPATT Diodes under Large Signal Conditions

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概要

• 論文の詳細を見る

• Computer simulations of silicon Read and p-n-n^+ diodes under large signal conditions reveal that the p-n-n^+ diode oscillates with a pulsed electron current as the Read diode and the field gradient in an active region of the both diodes is an important factor for high output power.

• 社団法人応用物理学会の論文
• 1969-01-05

著者

• Matsumura Masakiyo

  Central Research Laboratories Nippon Electric Co. Lid.

関連論文

• A Proposed Mechanism of Low-Frequency and High-Efficiency Mode of Avalanche Diodes
• Effect of Field Distribution of Silicon p-n-n^+ Avalanche Diodes on Efficiency
• Transient Behavior of Conduction Current from Small Signal to Large Signal in Read Diodes
• A New Operating Method for PLZT Display Devices
• Computer Simulation of Silicon Read and p-n-n^+ IMPATT Diodes under Large Signal Conditions

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