Electrical Properties of Semiconductor Photodiodes with Semitransparent Films
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概要
- 論文の詳細を見る
High speed photodiodes with semitransparent film-semiconductor junctions, which behave as Schottky barriers, are designed and prepared. The optimized width of the depletion layer of the photodiode is calculated for the selected cut-off frequency. The relations between transmittance and sheet resistivity are studied with some films of semiconducting compounds, which affect the gain and response time of photodiodes. The photodiodes, fabricated by the deposition of the semitransparent films of CdS or CU_2Se on Si, have high frequency response and the cut-off frequency of Cu_2Se-n.Si photodiodes is higher than 4 GHz.
- 社団法人応用物理学会の論文
- 1971-11-05
著者
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SAKAI Yoshio
Department of Gastroenterology, Graduate School of Medical Science, Kanazawa University
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Sakai Yoshio
Department Of Applied Physics Science University Of Tokyo
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KONDO RYUJI
Department of Marine Bioscience, Fukui Prefectural University
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Kondo Ryuji
Department Of Biological Sciences University Of Essex Uk:department Of Marine Bioscience Fukui Prefe
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Kondo Ryuji
Department Of Electronics Tokyo Institute Of Technology
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OKIMURA Hiroshi
Department of Electronics, Tokyo Institute of Technology
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Okimura Hiroshi
Department Of Electronics Tokyo Institute Of Technology
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Okimura Hiroshi
Department of Dermatology, Yamaguchi University School of Medicine
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SAKAI Yoshio
Department of Electronics, Tokyo Institute of Technology
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SAKAI Yoshio
Department Electronics, Tokyo Institute of Technology
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