Electrical and Photovoltaic Properties of CdS-Si Junctions
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概要
- 論文の詳細を見る
CdS-p・Si and CdS-n・Si junctions are prepared by vacuum evaporation of CdS on Si crystals, and their electrical and photovoltaic properties are studied. The junction prepared on hot Si substrate (substrate temperature; 150°-250℃) has properties of hetero-junction, while the one on cold substrate (50°-80℃) shows properties resembling those of Schottky barrier. CdS-p・Si junctions are generally superior to CdS-n・Si junctions in rectifying properties. CdS-p・Si cell on cold substrate shows excellent photovoltaic effect which is comparable to that of Si solar cell. The maximum solar conversion efficiency of CdS-p・Si cells is about 5.5%. Here, the CdS layer is supposed to act as a semi-transparent electrode.
- 社団法人応用物理学会の論文
- 1970-03-05
著者
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Kondo Ryuji
Department Of Biological Sciences University Of Essex Uk:department Of Marine Bioscience Fukui Prefe
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Okimura Hiroshi
Department Of Electronics Tokyo Institute Of Technology
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Okimura Hiroshi
Department of Dermatology, Yamaguchi University School of Medicine
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