Schottky Probe as a Diagnostic Tool for Dynamic Solid-Plasma Phenomena

概要

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The Schottky probe, in place of n^+-probes conventionally used, is proposed as a useful tool for the purpose of diagnosing various dynamic solid-plasma phenomena occurring in bulk semiconductors. First, the dynamic characteristics of the Schottky probe are predicted, based upon the simplest "diode theory". Consequently, although the results be valid only qualitatively at this stage of the studies, it appears still useful for analyses of various dynamic plasma phenomena. The results of the theoretical prediction are that the probe can detect (1) the time-dependent variation of the space potential in semiconductor at forward bias condition, (2) the variation of the density of minority carriers at reversed bias condition, and (3) the combined effects at the floating operational condition. The experimental examination for the above-mentioned theoretical prediction has been performed by making use of the phenomenon called "photo-electromagnetic effect." The results experimentally obtained are qualitatively consistent with those of the theoretical prediction.
社団法人応用物理学会の論文
1971-07-05