Mechanism of Resistivity Decrease of N-Type InSb by Millimeter Microwave Irradiation
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概要
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The phenomenon that the overall electrical resistivity of Insb decreases significantly with the irradiation of 4mm microwave has been observed in the temperature region from 1.7 to 4.2 K and in the presence of externally applied magnetic field up to 18 kG. The experimental results have been analysed on the basis of the two-band model. It is concluded that the signiflcant decrease in the resistivity can be attributed, to the increase in the increase in the carrier concentration of the conduction band which arises from the impacti-ionization of donors by hot-electrons in the conduction band. The possibility that photo-conduction by hot-electrons or the photo-ionization of donors plays a dominant role is almost entirely excluded.
- 社団法人日本物理学会の論文
- 1974-07-15
著者
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SEKIGUCHI Tadashi
Department of Electrical Engineering, University of Tokyo
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Sekiguchi Tadashi
Department Of Electrical Eng. University Of Tokyo
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Yamada Kohzi
Department of Electrical Engineering, University of Tokyo
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Yamada Kohzi
Department of Electrical Engineering, University of Tokyo:(Present address) Department of Electronics, Faculty of Science and Engineering, Saitama University
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