160万画素増幅型イメージセンサBCASTの開発(<論文小特集>固体撮像とその関連技術)

概要

論文の詳細を見る
This paper introduces a new device architecture suitable for obtaining a large format, high resolution, and high performance image sensor. Each pixel in the sensor comprises a buried photodiode and a junction field effect transistor, for signal charge generation and amplificaion, respectively. A 1.6M pixel image sensor was constructed with source follower amplifiers and correlated double sampling circuits for signal readout. The image sensor exhibited high-sensitivity, low-noise, and high-protection capabilities for blooming and smear. The fundamental characteristics-sensitivity of 2V/lx・s, dynamic range of 75dB, noise equivalent exposure of 9.2×10^<-5>lx・s, and a dark FPN level of -66dB were achieved.
社団法人映像情報メディア学会の論文
1997-02-20