ハイブリッド型256×256画素10μm帯HgCdTe赤外センサ : 情報入力

概要

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A 256×256-element HgCdTe Hybrid IRFPA has been developed. We focused on three technologies to realize a large scale IRFPA. The first new technology is a thin silicon readout circuit on sapphire substrate to relax thermal stress between HgCdTe diode array on CdZnTe and Si readout circuit. The second is a HgCdTe diode array with anodic sulfide (CdS) passivant and optimised cutoff wavelength to achieve high sensitivity. The third is a MOS type readout circuit with interlace scheme which has large handling capacity. Using these three technologies, we have developed a high sensitive 256×256-element HgCdTe IRFPA. The noise equivalent temperature difference (NETD) 0.06K was obtained.
1994-03-04