A High-Density Multiple-Valued Content-Addressable Memory Based on One Transistor Cell (Special Issue on LSI Memories)
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概要
- 論文の詳細を見る
This paper presents a high-density multiple-valued content-addressable memory (MVCAM) based on a floating-gate MOS device. In the proposed CAM, a basic operation performed in each cell is a threshold function that is a kind of inverter whose threshold value is programmable. Various multiple-valued operations for data retrieval can be easily performed using threshold functions. Moreover, each cell circuit in the MVCAM can be implemented using only a single floating-gate MOS transistor. As a result, the cell area of the four-valued CAM are reduced to 37% in comparison with that of the conventional dynamic CAM cell.
- 社団法人電子情報通信学会の論文
- 1993-11-25
著者
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Higuchi Tatsuo
Graduate School Of Information Sciences Tohoku University
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Hanyu Takahiro
Graduate School of Information Sciences, Tohoku University
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Hanyu Takahiro
Graduate School Of Information Sciences Tohoku University
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Higuchi Tatsuo
Graduate School Of Information Sciences And Faculty Of Engineering Tohoku University
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Aragaki Satoshi
Graduate School of Engineering, Tohoku University
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Aragaki Satoshi
Graduate School Of Engineering Tohoku University
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