Suppression of Third-Order Intermodulation Distortion Signals by Novel Methods
スポンサーリンク
概要
- 論文の詳細を見る
Two types of linearization circuits are newly proposed to suppress third-order intermodulation distortion (IMD3) signals. They are applicable to RF IC's of small to medium power capacities. And they are simple enough to be adopted in monolithic circuits.
- 社団法人電子情報通信学会の論文
- 1999-07-22
著者
-
Youn Yong-sik
Micro Electronics Technology Lab. Electronics And Telecommunications Research Institute
-
Kim Chung-hwan
Micro Electronics Technology Lab. Electronics And Telecommunications Research Institute
-
Kim Cheon
Micro Electronics Technology Lab., Electronics and Telecommunications Research Institute
-
Park Min
Micro Electronics Technology Lab., Electronics and Telecommunications Research Institute
-
Kim Sung-Do
Micro Electronics Technology Lab., Electronics and Telecommunications Research Institute
-
Park Mun-Yang
Micro Electronics Technology Lab., Electronics and Telecommunications Research Institute
-
Yu Hyun
Micro Electronics Technology Lab., Electronics and Telecommunications Research Institute
-
Kim Sung-do
Micro Electronics Technology Lab. Electronics And Telecommunications Research Institute
-
Kim Sung-do
Semiconductor Technology Division Etri
-
Yu Hyun
Micro Electronics Technology Lab. Electronics And Telecommunications Research Institute
-
Yu H
Rf Cmos Circuit Team Electronics And Telecommunications Research Institute
-
Park M
Micro Electronics Technology Lab. Electronics And Telecommunications Research Institute
-
Kim Cheon
Micro Electronics Technology Lab. Electronics And Telecommunications Research Institute
-
Park Min
Micro Electronics Technology Lab. Electronics And Telecommunications Research Institute
関連論文
- Monolithic L-band CMOS LNAs Performance With the Ground Patterned Spiral Inductors
- Suppression of Third-Order Intermodulation Distortion Signals by Novel Methods
- Monolithic L-band CMOS LNAs Performance With the Ground Patterned Spiral Inductors
- Suppression of Third-Order Intermodulation Distortion Signals by Novel Methods
- Monolithic L-band CMOS LNAs Performance With the Ground Patterned Spiral Inductors
- Suppression of Third-Order Intermodulation Distortion Signals by Novel Methods
- Implementation of 155.52Mbps Physical Layer Processor for ATM Applications
- Implementation of 155.52Mbps Physical Layer Processor for ATM Applications
- Fabrication and Characterization of Silicon Field Emission Cathodes using Spin-on-Glass Etch-back Process
- Fabrication and Characterization of Silicon Field Emission Cathodes using Spin-on-Glass Etch-back Process
- Accurate Extraction of Bias-Dependent MOSFET Parameters for RF Model Applications
- Accurate Small-Signal Modeling and Parameter Extraction for RF MOSFETs
- A New Fabrication Method of Silicon Field Emission Cathodes with Sub-halfmicron Gate Apertures
- A New Fabrication Method of Silicon Field Emission Cathodes with Sub-halfmicron Gate Apertures
- Low Dielectric Constant Fluorinated Oxide Films Prepared by Remote Plasma Chemical Vapor Deposition
- Low Dielectric Constant Fluorinated Oxide Films Prepared by Remote Plasma Chemical Vapor Deposition
- A Novel Fully Integrated LC Oscillator Using Miller Tuning Method
- A Novel Fully Integrated LC Oscillator Using Miller Tuning Method
- A Novel Fully Integrated LC Oscillator Using Miller Tuning Method
- A 0.8-μm CMOS 1.33 to 2-GHz Wide Range Tunable Two-Stage Current Steering L-C Oscillator
- A 0.8-μm CMOS 1.33 to 2-GHz Wide Range Tunable Two-Stage Current Steering L-C Oscillator
- A 0.8-μm CMOS 1.33 to 2-GHz Wide Range Tunable Two-Stage Current Steering L-C Oscillator
- RF CMOS Technologies for the Future Portable Wireless Communications
- Accurate Extraction of Bias-Dependent MOSFET Parameters for RF Model Applications