Accurate Extraction of Bias-Dependent MOSFET Parameters for RF Model Applications

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概要

• 論文の詳細を見る

• Gate voltage-dependence data of MOSFET model parameters obtained by the RF extraction method based on Z-parameters expressions has been presented. These extracted RF data are shown to be explainable from short-channel or nonquasi-static effects. The gate voltage-dependencies of intrinsic capacitances and conductances for different size of MOSFETs show the linear scaling behavior with a reasonable error in terms of total gate width. This information will be very useful to develop a scalable large-signal model of multi-finger MOSFETs for nonlinear RF IC design.

• 一般社団法人電子情報通信学会の論文
• 1999-07-22

著者

• Yu Hyun

  Micro Electronics Technology Lab. Electronics And Telecommunications Research Institute

• Lee Seonghearn

  Department Of Electronic Engineering Hankuk University Of Foreign Studies

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