Accurate Extraction and Modeling of High-Temperature-Dependent Channel Mobility in Metal–Oxide–Semiconductor Field-Effect Transistors Using Measured $S$-Parameters

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概要

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• An improved RF method based on the slope extraction of the total drain–source resistance and total gate charge versus mask gate length from measured $S$-parameters is presented to extract the effective channel mobility of bulk metal–oxide–semiconductor field-effect transistors (MOSFETs) from 27 to 250 °C. An improved temperature-dependent channel mobility equation is also used to eliminate the high-temperature modeling errors in the conventional equation. Much better agreement with measured electron mobility data from 27 to 250 °C is achieved by using the improved equation rather than the conventional one, verifying the accuracy of the improved equation.

• 2010-04-25

著者

• Lee Seonghearn

  Department Of Electronic Engineering Hankuk University Of Foreign Studies

• Seonghearn Lee

  Department of Electronic Engineering, Hankuk University of Foreign Studies, San 89, Wangsan-ri, Mohyun-myun, Yongin, Kyungki-do 449-791, Korea

• Ko Bonghyuk

  Department of Electronic Engineering, Hankuk University of Foreign Studies, San 89, Wangsan-ri, Mohyun-myun, Yongin, Kyungki-do 449-791, Korea

• Jung Daehyoun

  Department of Electronic Engineering, Hankuk University of Foreign Studies, San 89, Wangsan-ri, Mohyun-myun, Yongin, Kyungki-do 449-791, Korea

関連論文

• Accurate Extraction of Bias-Dependent MOSFET Parameters for RF Model Applications
• Accurate Small-Signal Modeling and Parameter Extraction for RF MOSFETs
• Accurate Extraction of Bias-Dependent MOSFET Parameters for RF Model Applications
• Accurate Extraction and Modeling of High-Temperature-Dependent Channel Mobility in Metal–Oxide–Semiconductor Field-Effect Transistors Using Measured $S$-Parameters

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