Analysis of Dynamic Fracture Behavior of Partially Stabilized Zirconia at Elevated Temperatures by the Method of Caustics

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概要

• 論文の詳細を見る

• The validity of the caustic method on fracture problems of partially stabilized zirconia at room and elevated temperatures up to 1200°C is confirmed, and we investigated the dynamic fracture behavior of this material from pictures taken using the apparatus of caustics together with an ultrahigh-speed camera, Imacon 790. Consequently, it is revealed that dynamic fracture toughness K<Id> abruptly decreases as the testing temperature increases over about 500°C , and the ratio of K<Id> to static fracture toughness is increased from 2.0 at room temperature to 5.0 at 800°C. Moreover, it is ascertained that the crack-propagation fracture toughness is increased with the crack velocity at any testing temperature up to 1200°C, and this tendency is decreased with the rise of temperature in this range. Finally, an example of the visualized acoustic emission (AE) wave is shown. It is revealed that the velocity of this AE wave decreases slightly as the temperature rises, and it coincides with the Rayleigh wave speed of this material.

• 一般社団法人日本機械学会の論文
• 1994-10-15

著者

• Takahashi Susumu

  Department Of Mechanical Engineering Kanto Gakuin University

• Shimizu Koji

  愛知県心身障害者コロニー発達障害研究所

• Shimizu K

  Department Of Mechanical Engineering Kanto Gakuin University

• Shimizu Koji

  Department Of Mechanical Engineering Kanto Gakuin University

• SUETSUGU Masahiro

  Department of Mechanical Engineering, Suzuka National College of Technology

• Suetsugu Masahiro

  Graduate School of Engineering, Kanto Gakuin University

• Suetsugu Masahiro

  Department Of Mechanical Engineering Suzuka National College Of Technology

• Takahashi S

  Department Of Mechanical Engineering Kanto Gakuin University

• Takahashi Susumu

  Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo

• SHIMIZU Koji

  Department of Biology, Naruto University of Education

• Shimizu Koji

  Department of Applied Physics, Osaka University, Suita, Osaka 565-0871, Japan

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